Grinding is performed to process SiC f /SiC composites to achieve the desired assembly tolerance and geometric accuracy . However, SiC f /SiC composites are susceptible to matrix cracking, fibre pull-out and damage during grinding because of their hardness, brittleness and heterogeneity [ 5 ], which result in low processing efficiency, …
In this paper, the advanced grinding technologies for SiC ceramics, including high-speed grinding, ultrasonic vibration-assisted grinding, laser-assisted grinding, and electrolytic …
Overview: Sinmat Inc. University of Florida Spin-off. Novel planarization technologies for the semiconductor industry. Winner of four R&D 100 Awards 2004 & 2005, 2008, 2009. Top 100 most significant technologies of the year. 10 licensed and pending patents. Employees : 28 and several consultants.
Hardinge's Technical Know-How Provides Streamlined SiC Boule Fabrication Process ... With its 130 years of grinding and materials knowledge, Hardinge's development team, along with the addition of key SiC industry experts, has addressed the inefficiencies of SiC boule processing with a comprehensive and cost-effective package. ...
This paper aims at analyzing multiple grinding characteristics of Al/SiC composites produced by stir casting. Desirability function-based approach is employed wherein the process parameters like wheel velocity, work piece velocity, feed rate and depth of cut were varied to obtain optimum tangential grinding force, surface roughness and grinding …
The Backgrinding Process. To improve the productivity of an operation, a multi-step grinding operation is generally performed. The first step uses a large grit to coarsely grind the wafer and remove the bulk of the excess wafer thickness. A finer grit is used in the second step to polish the wafer and to accurately grind the wafer to the ...
Based on the grinding forces, surface roughness and radial wheel wear the grinding process with and without vibrations is analysed. Moreover the influence of the bonding and the table feed speed is shown at the example of SSN. ... (SiC) grinding wheel by maintaining the diamond tools at vcdp = 10 m/s and the truing wheel at vR = 17.5 m/s …
Grinding/lapping is a critical planarization process approach to obtain a high-quality single-crystal 4H–SiC substrate surface, mainly using high-hardness wheels/abrasives to efficiently remove cut marks and rough peaks on the sliced SiC substrate's surface to reduce surface roughness and improve surface flatness for …
Self-excited regenerative vibration, a well-known endogenous excitation mechanism, has a critical influence on material removal behavior and ground surface generation in a precision grinding process. During ultrasonic vibration–assisted grinding (UVAG), one-dimensional or two-dimensional ultrasonic vibration exerted to abrasive …
The materials were removed by multiple cutting forces during the grinding process because of the diversity of the C/SiC compositions and complexity of the MRMs. A single grit was subjected to three types of grinding forces: fiber extrusion removal, fiber bending fracture, and SiC matrix brittle fracture grinding force [51]. 3.3.1.
Abstract. The significantly increased stability of third-generation semiconductors, both mechanically and chemically, presents a significant challenge to traditional wafer grinding. This study develops pure electrical discharge machining as an …
Since it is hard and brittle, it is easy to induce damages in a machining process, for instance, cracks in SiC matrix [1], lateral damages [4], ... In order to reveal the effects of grinding speed on material removal mechanism, this study is to grind SiC f /SiC with different grinding speeds. The highest grinding speed is to over 50 m/s. In a ...
A general growth process of SiC is done by the physical vapor transport (PVT) method. ... such as (1) grinding the diced wafer, (2) polishing with diamond slurry to obtain an optically perfect surface, and (3) chemical mechanical polishing (CMP) to fabricate a wafer-level SiC substrate for the next power device process. 2.2. SiC Epitaxy.
SiC materials such as sintered SiC, CVD-SiC, and monocrystalline SiC are hard-to-difficult to grind, and they are expected to be applied for optical elements, structural components, dies and molds ...
For outer surfaces, end-feed centerless grinding was used [9]. This process allows the wearing of material from long tubes thanks to two rotating wheels. For SiC/SiC grinding, diamond wheels were used. For the inner surface, grinding was done thanks to three equally located cutting tools.
The SiC wafer was first ground with diamond abrasives with a grain size of 6–12 µm. The SiC surface was checked every 5 min. When there were no large scratches on the SiC surface, grains of 1–3 µm were used instead. When the surface scratches were small, the grinding became polishing, with diamond grains of 0.5 µm.
The wear and elastic deformation of the abrasive in the grinding process of SiC are the primary causes of the actual processing depth being far lower than the preset processing depth at the nanometer scale. 3. By considering factors such as abrasive wear, elastic deformation, and SiC plastic deformation, multiple repeated processing under the ...
The process of grinding SiC single crystals containing defects with a single diamond is simulated using molecular dynamics. There is an elastic deformation interval when grinding a workpiece with defects; the defects inside the interval will be filled in while the defects outside the interval will not.
A surface roughness predictive model involving the grinding wheel cumulative wear was developed for grinding process of 2.5D needled Cf/SiC composites. Compared with the experimental data, the ...
In the grinding process, although grinding speed is not the primary factor affecting surface topography, it is the main factor affecting ... This paper investigated the removal mechanism and surface quality of single crystal 4 H-SiC during the grinding process, as well as the impact of the measurement area on surface roughness (S a) …
Despite the well-known hardness, stiffness and strength of monocrystalline SiC, Meister has developed ultra-fine grinding technologies that assure sub-nm average surface roughness (Ra) and …
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Meng et al. and others studied the importance of coupling effect on SiC grinding removal efficiency by MD. This study is of great significance for comprehending the removal mechanism of SiC in nano-polishing process. Zhou et al. researched the precision polishing of SiC with double diamond grains on the micron scale through MD …
Qu et al. 64 also mentioned that the fiber orientation angle was an important parameter that affected the grinding process of C f /SiC composites. In general, grinding force and surface roughness increase with the increase of grinding depth and feed rate, and decrease with the increase of grinding depth, and fiber orientation is also an ...
To reveal the vibration-assisted grinding mechanism of SiC, the vibration-assisted nano-scratch process is studied using the molecular dynamics method, and the material removal process and damage ...
Generally, the wafer back-thinning process for SiC wafer involves mechanical grinding using diamond abrasives, ... Yam et al. used a #2000 diamond wheel to grind SiC under a constant pressure, and a surface roughness Ra of 1.57 nm was achieved. Tsukimoto et al. found that a 2.4 µm subsurface damage (SSD) layer existed …
Silicon carbide (SiC)-bonded diamond materials, comprising approximately 50% diamond by volume, represent innovative composites with exceptional mecha…
A longitudinal torsional ultrasonic vibrations cutting force prediction model containing the parameters of tool, material properties and ultrasound was established by …
In this paper, the ductile-oriented grinding mechanism and process design are investigated to promote grinding quality with a higher efficiency in high-speed …
The grinding process of SiC ceramics involves intricate interactions between abrasive grains and workpiece material. Surface and subsurface damage caused by the material removal procedure will reduce the service life of the SiC ceramics. The damage model of SiC ceramics considering the strain rate effect is established in this …
Phase transition, dislocations and stacking faults were observed in the subsurface damage layer. Wu et al. [56], [57] adopt MD simulations to analyze the plastic deformation of 6H-SiC during the nano-grinding process, considering the influence caused by position pattern, size and protrusion height of diamond grains. The grain position …
Ductile-regime diamond grinding is an important manufacturing technique in the process chain for SiC, which usually delivers sub-micron-level ground surface roughness with depth of …
At Weldon Solutions, a company built on innovation and consistency across our grinding and automation platforms, we are actively designing and developing machines that can grind SiC boules from a naturally formed shape into a useable substrate for producing high-performance microchips. According to recent forecasts, the SiC market …
To overcome these disadvantages, we propose a novel fabrication process including grinding-mould pressing-sintering process, which can be able to prepare the porous ceramics with uniform pores distribution, controllable permeability and high mechanical property. ... Transition region forms from raw C/SiC porous ceramic to …
In this paper, the nanogrinding process of single-crystal silicon carbide is studied with molecular dynamics. By changing the grinding depth, we analyze the atomic Y direction displacement, crystal defect, force, von Mises stress and the wear of abrasive. We found that with the increase in grinding depth, the atomic Y direction displacement, …
Several studies have investigated the influence of grinding or machining processes at the microscopic scale on ceramic composites, essentially on C/C or C/SiC composites [15], [16].Few studies focused on SiC/SiC materials with the exception of [17].The machining process generates brittle fracture of the matrix and the fibers but …
There are different types of SiC machining processes i.e. ultrasonic machining process, diamond tool machining process, plasma chemical vaporization machining process, electrical discharge machining process, laser beam machining process, etc. [39]. H. Abderrazak et al. [43] described the different methods used for the elaboration of SiC are …